Device Simulation

Parametrization of a silicon nanowire effective mass model from sp 3 d 5 s* orbital basis calculations

Materials Engineering / Condensed Matter Physics / Nanowires / Resource Limitation / Semiconductor science / Cross Section / Tight Binding / Device Simulation / Effective mass / Cross Section / Tight Binding / Device Simulation / Effective mass

Developing a transparent shading device as a daylighting system

Architecture / Case Study / Building / Cross Section / Device Simulation / BUILDING INFORMATION

Phase-change random access memory: A scalable technology

Information Systems / Computer Software / Power Consumption / Phase transition / Random access memory / Phase Change / Phase Change Material / Particle Size / Cross Section / Device Simulation / IBM / Film Thickness / Material Properties / Failure Mechanism / Phase Change / Phase Change Material / Particle Size / Cross Section / Device Simulation / IBM / Film Thickness / Material Properties / Failure Mechanism

Phase-change random access memory: A scalable technology

Information Systems / Computer Software / Power Consumption / Phase transition / Random access memory / Phase Change / Phase Change Material / Particle Size / Cross Section / Device Simulation / IBM / Film Thickness / Material Properties / Failure Mechanism / Phase Change / Phase Change Material / Particle Size / Cross Section / Device Simulation / IBM / Film Thickness / Material Properties / Failure Mechanism

Spin-polarized transport in semiconductor nanostructures

Monte Carlo / Schottky Barrier / Device Simulation / Device Modeling / Electric Field / Spin Polarization

Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs

Monte Carlo / High performance / Device Simulation

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